Effect of light-soaking on the hydrogen effusion mechanisms in polymorphous silicon thin film structures
Author:
Funder
DGAPA-UNAM PAPIIT
CONACyT Mexico
SENER-CONACyT
CONACyT
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference36 articles.
1. Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C;Butté;J. Non-Cryst. Solids,2000
2. Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate;Soro;J. Appl. Phys.,2011
3. Influence of light-soaking treatment on the optoelectronic properties of polymorphous silicon thin films to be used in solar cells;Alvarez-Macias,2013
4. Hydrogen in silicon: a discussion of diffusion and passivation mechanisms;Sopori;Sol. Energy Mater. Sol. Cells,1996
5. Reversible conductivity changes in discharge produced amorphous Si;Staebler;Appl. Phys. Lett.,1977
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