Ion beam current dependence of compositions and resistivities on titanium nitride films deposited onto silicon by an ion beam assisted deposition method-Reference-Cited by-同舟云学术

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Ion beam current dependence of compositions and resistivities on titanium nitride films deposited onto silicon by an ion beam assisted deposition method

Published:2006-01 Issue:1-2 Volume:242 Page:390-392
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yokota Katsuhiro,Kasuya Tomohiko,Nakamura Kazuhiro,Ohnishi Masami,Miyashita Fumiyoshi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. TiCxNy and TiCx-TiN films obtained by CVD in an ultrasonic field

2. Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

3. Joint Committee for Powder Diffraction Standards, Powder Diffraction File (Int. Center for Diffraction Data, Park Lane, 1989), No. 38-1420 and No. 44-1095.

4. Evolution of texture at growth of titanium nitride films prepared by photon and ion beam assisted deposition

5. Ionized physical vapor deposition of titanium nitride: Plasma and film characterization

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure characterization of nano-structured Cr/Cr2N multilayer films produced through radio frequency magnetron sputtering;Thin Solid Films;2014-01

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