Sheet resistance of GaAs conductive layers isolated by proton irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
1. Ion implantation for isolation of III-V semiconductors
2. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY
3. Characterization of deep level traps responsible for isolation of proton implanted GaAs
4. Electrical isolation of p-type GaAs layers by ion irradiation
5. Electrical isolation of GaAs by light ion irradiation damage
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2. Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation;Materials Science in Semiconductor Processing;2018-02
3. Characterization and local magnetic modification of ion irradiated GaMnAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-11
4. Deep levels fine structure in proton implanted p-type GaAs;Journal of Physics D: Applied Physics;2010-05-06
5. Emission rate dependence on the electric field for two trap levels in proton-irradiatedn-type GaAs;Physical Review B;2008-06-16
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