Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation-Reference-Cited by-同舟云学术

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Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation

Published:2018-02 Issue: Volume:74 Page:88-97
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kozubal Maciej Artur,Szerling Anna,Kosiel Kamil,Myśliwiec Marcin,Pągowska Karolina,Jakieła Rafał,Kruszka Renata,Guziewicz Marek,Barcz Adam

Funder

National Centre for Research and Development

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Quantum cascade laser;Faist;Science,1994

2. 300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm;Page;Appl. Phys. Lett.,2001

3. Recent progress in terahertz quantum cascade lasers;Kumar;IEEE J. Sel. Top. Quantum Electron.,2011

4. Ion implantation in iii–v semiconductor technology;Pearton;Int. J. Mod. Phys. B,1993

5. Ion implantation of semiconductors;Williams;Mater. Sci. Eng. A,1998

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation for semiconductor lasers;2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2023-09-18

2. The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures;Materials Science in Semiconductor Processing;2021-06

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