Study of resonant-tunneling diodes I-V curves kinetics under destabilizing factors influence

Abstract

Abstract Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter’s nonlinear element would allow to improve converter’s performance indices and extend its frequency range up to THz. The purpose of research is investigating kinetics of the RTD’s I-V curve under given operating conditions, such as high temperature and ionizing radiation’s influence. For this case, special mathematical models are submitted. These models describe RTD I-V curves’s degradation under high temperature and ionizing radiation’s influence. Basing on described models a program package allowing to simulated RTD I-V curves’s kinetics under listed factors’ influence was developed. Results’ adequacy is verified by comparison with experimental data.