Investigations on 40MeV Li3+ ions irradiated GaN epilayers-Reference-Cited by-同舟云学术

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Investigations on 40MeV Li3+ ions irradiated GaN epilayers

Published:2008-04 Issue:8 Volume:266 Page:1799-1803
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Suresh Kumar V.,Kumar J.,Kanjilal D.,Asokan K.,Mohanty T.,Tripathi A.,Rossi Francisca,Zappettini A.,Lazzarani L.,Ferrari C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Electrical isolation of GaN by MeV ion irradiation

2. Lattice damage produced in GaN by swift heavy ions

3. Defect clustering in GaN irradiated with O+ ions

4. Ion implantation into GaN

5. In situion channeling study of gallium disorder and gold profiles in Au-implanted GaN

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique;Radiation Physics and Chemistry;2024-03

2. Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation;Scientific Reports;2018-03-07

3. Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition;IETE Technical Review;2015-06-15

4. Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN;Physica B: Condensed Matter;2011-11

5. Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-09

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