Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN-Reference-Cited by-同舟云学术

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Effect of 100MeV Ni9+ ion irradiation on MOCVD grown n-GaN

Published:2011-11 Issue:22 Volume:406 Page:4210-4213
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Suresh Kumar V.,Kumar J.,Puviarasu P.,Munawar Basha S.,Kanjilal D.,Asokan K.

Funder

Inter-University Accelerator Centre

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Direct evidence of N aggregation and diffusion in Au+ irradiated GaN

2. GaN: Processing, defects, and devices

3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

4. Molecular dynamics study of damage accumulation in GaN during ion beam irradiation

5. The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

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1. Ion-induced transformation of shallow defects into deep-level defects in GaN epilayers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-07

2. Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions;Semiconductor Science and Technology;2024-05-03

3. Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique;Radiation Physics and Chemistry;2024-03

4. Impact of swift heavy oxygen ion irradiation on the performance of Pt/GaN Schottky diodes and epitaxial layers: A comparative study;Journal of Applied Physics;2023-10-27

5. Crossover of energy deposition and semi-stable chemical bonding in the nonadiabatic dynamics of GaN under proton irradiation;Journal of Physics: Condensed Matter;2023-07-17

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