Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Optical detection of magnetic resonance in electron-irradiated GaN
2. Effect of Electron Irradiation on Optical Properties of Gallium Nitride
3. Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN
4. Photoluminescence of GaN: Effect of electron irradiation
5. Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures
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2. Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions;Semiconductor Science and Technology;2024-05-03
3. Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN;Materials Chemistry and Physics;2021-07
4. Magnetic and structural properties of Fe-implanted GaN at room temperature;Vacuum;2021-02
5. Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation;Applied Physics Express;2020-05-07
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