Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1504873
Reference9 articles.
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2. Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN;Materials Chemistry and Physics;2021-07
3. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation;Journal of Applied Physics;2013-11-14
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