Mechanisms of ion-induced GaN thin layer splitting-Reference-Cited by-同舟云学术

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Mechanisms of ion-induced GaN thin layer splitting

Published:2009-05 Issue:8-9 Volume:267 Page:1264-1268
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Moutanabbir O.,Chabal Y.J.,Chicoine M.,Christiansen S.,Krause-Rehberg R.,Schiettekatte F.,Scholz R.,Seitz O.,Senz S.,Süßkraut F.,Gösele U.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Wide bandgap light-emitting materials and devices;Neumark,2007

2. Silicon on insulator material technology

3. Hydrogen blistering of silicon: Progress in fundamental understanding

4. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

5. Role of hydrogen in hydrogen-induced layer exfoliation of germanium

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1. Wafer-scale fabrication of single-crystalline calcium fluoride thin-film on insulator by ion-cutting;Optical Materials;2024-11

2. Wafer-Scale Fabrication of Single-Crystalline Calcium Fluoride Thin-Film on Insulator by Ion-Cutting;2024

3. Blistering of potassium-tantalate single crystals induced by helium implantation;Journal of the Korean Physical Society;2021-03-08

4. Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique;Semiconductor Science and Technology;2020-10-13

5. Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate;AIP Advances;2018-05

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