Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate-Reference-Cited by-同舟云学术

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

Published:2018-05 Issue:5 Volume:8 Page:055323
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Runchun¹²,Zhao Beiji³²,Huang Kai¹²,You Tiangui¹,Jia Qi¹²^ORCID,Lin Jiajie¹²,Zhang Shibin¹²,Yan Youquan¹²,Yi Ailun¹²,Zhou Min¹,Ou Xin¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

Funder

Frontier Science Key Program of CAS

Shanghai Science and Technology Innovation Action Plan Program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030776

Reference40 articles.

1. Review of the Global Trend of Interconnect Reliability for Integrated Circuit

2. Nanofabrication

3. Nanometer CMOS ICs

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