Molecular-dynamics simulation of germanium film growth by cluster deposition-Reference-Cited by-同舟云学术

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Molecular-dynamics simulation of germanium film growth by cluster deposition

Published:2005-07 Issue:4 Volume:234 Page:487-493
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang L.,Feng J.Y.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

2. High-quality Ge epilayers on Si with low threading-dislocation densities

3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

4. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)

5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular dynamics in the examination of the atomic structure of small-sized metallic objects;Inorganic Materials;2015-11-13

2. Analytical bond-order potential for the cadmium telluride binary system;Physical Review B;2012-03-22

3. Atomistic study of deposition process of Be thin film on Be substrate;Acta Physica Sinica;2012

4. Atomistic study of deposition process of Al thin film on Pb substrate;Acta Physica Sinica;2012

5. Study of nanoclusters growth at initial stages of ultrathin film deposition by kinetic modeling;Applied Surface Science;2008-04

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