Silicidation-induced band gap shrinkage in Ge epitaxial films on Si-Reference-Cited by-同舟云学术

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Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Published:2004-02-02 Issue:5 Volume:84 Page:660-662
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Jifeng,Cannon Douglas D.,Wada Kazumi,Ishikawa Yasuhiko,Jongthammanurak Samerkhae,Danielson David T.,Michel Jurgen,Kimerling Lionel C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1644618

Reference15 articles.

1. Elastic bandwidth [optical-fiber communication]

2. InGaAs-based high-performance p-i-n photodiodes

3. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

4. High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration

5. High performance germanium-on-silicon detectors for optical communications

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2. High-resolution TEM characterization of epitaxial passivation for a high nitrogen face-centered-cubic phase formed on AISI 304L austenitic stainless steel in borate buffer solution;Electrochimica Acta;2021-10

3. Calculation of electronic and optical properties of 1550 nm VCSEL based on Group IV elements;Laser Physics;2021-01-26

4. Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices;Nanophotonics and Micro/Nano Optics VI;2020-10-10

5. Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors;Journal of Applied Physics;2020-10-07

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