Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Identification of getter defects in high-energy self-implanted silicon at Rp/2
2. Prevention of impurity gettering in the RP/2 region of ion-implanted silicon by defect engineering
3. Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range
4. Physical mechanisms behind the ion-cut in hydrogen implanted silicon
5. Investigation of plasma hydrogenation and trapping mechanism for layer transfer
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1. Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon;Applied Surface Science;2012-11
2. Hydrogen Gettering within Processed Oxygen-Implanted Silicon;Advanced Materials Research;2011-07
3. Hydrogen gettering in annealed oxygen-implanted silicon;Semiconductor physics, quantum electronics and optoelectronics;2010-04-30
4. Deuterium accumulation within nano-structured layers in Si:He upon plasma treatment;physica status solidi (c);2009-12
5. Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O;Solid State Phenomena;2009-10
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