Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. 1. A. Misiuk, A. Barcz, J. Ratajczak, L. Bryja, Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen // J. Mater. Sci.: Mater. in Electronics // 14, p. 295-298 (2003).
2. 2. I.V. Antonova, A. Misiuk, C.A. Londos, Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure // J. Appl. Phys. 99, p. 033506 1-6 (2006).
3. 3. A.G. Ulyashin, J.S. Christinsen, B.G. Svensson, R. Kogler, W. Skorupa // Nucl. Instrum. Meth. Phys. Res. B 253 (2006).
4. 4. A. Misiuk, A. Ulyashin, A. Barcz, P. Formanek, Accumulation of hydrogen within implantationdamaged areas in processed Si:N and Si:O // Solid State Phenom. 156-158, p. 319-324 (2010).
5. 5. A. Misiuk, J. Ratajczak, J. Katcki, I.V. Antonova, in: Science and Technology of Semiconductor-onInsulator Structures and Devices Operating in a Harsh Environment, Eds D. Flandre et al. Kluver Academic Publishers, 2005, p. 91-96.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献