HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. High-mobility strained-Si PMOSFET's
2. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
3. Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure
4. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
5. Relaxation of strained Si layers grown on SiGe buffers
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1. Lattice Defects Diffuse Scattering from Thin Films of a Ge-Si System with Low-Energy Ar+ and Xe+ Bombardment During Molecular Beam Epitaxy (MBE) Growth;Metallurgical and Materials Transactions A;2012-10-09
2. Dopant incorporation in thin strained Si layers implanted with Sb;Thin Solid Films;2010-02
3. Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
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