TEM study of PtSi contact layers for low Schottky barrier MOSFETs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Experimental investigation of a PtSi source and drain field emission transistor
2. Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
3. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
4. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
5. Schottky-Barrier Source/Drain MOSFETs on Ultrathin SOI Body With a Tungsten Metallic Midgap Gate
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction;IET Circuits, Devices & Systems;2015-03
2. PtSi Clustering in Silicon Probed by Transport Spectroscopy;Physical Review X;2013-12-09
3. Introduction to Schottky-Barrier MOS Architectures: Concept, Challenges, Material Engineering and Device Integration;Nanoscale CMOS;2013-03-05
4. TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors;Open Physics;2011-01-01
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