Heteroepitaxial growth and structural characterization of rutile TiO2 thin films on GaN (0001) templates prepared by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
1. Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy
2. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors
5. Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heteroepitaxial growth and characterization of monocrystal anatase TiO2 films on epi-GaN (0001)/sapphire substrates;Journal of Materials Science;2016-09-16
2. Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers;Thin Solid Films;2015-09
3. Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-01
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