Ion-beam induced defects and nanoscale amorphous clusters in silicon carbide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference35 articles.
1. 6H-silicon carbide devices and applications
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. Silica films on silicon carbide: a review of electrical properties and device applications
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5. Physical Properties of SiC
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