Investigation of the recovery process in low-dose neutron-irradiated 6H-SiC by lattice parameter and FWHM of diffraction peak measurements
Author:
Affiliation:
1. School of Science, Tianjin Chengjian University, Tianjin, People’s Republic of China
2. Beijing Changcheng Aeronautic Measurement and Control Technology Research Institute, Beijing, People’s Republic of China
Funder
Aeronautical Science Foundation of China
Natural Science Foundation of Tianjin City
Postgraduate Innovation Project of Tianjin
High-Performance Computing Center of Hebei University
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150.2022.2079086
Reference33 articles.
1. Handbook of SiC properties for fuel performance modeling
2. X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress
3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
4. Damage effects in 6H-SiC single crystals by Si&H dual ion irradiation: A combined Raman and XRD study
5. Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC;Journal of Electronic Materials;2024-03-04
2. High Temperature Recovery of Neutron Irradiation-induced Swelling and Optical Property of 6H-SiC;Journal of Inorganic Materials;2023
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