Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC
Author:
Funder
Grant of National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment
Yangzhou Science and Technology Bureau, China
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11664-024-10989-y.pdf
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2. C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, and G.V. Astakhov, Influence of irradiation on defect spin coherence in silicon carbide. Phys. Rev. Appl. 13, 044054 (2020).
3. B. Yang, Y.K. Nakagawa, M. Kondo, and T. Shibayama, Anisotropic defect distribution in He+-irradiated 4H-SiC: effect of stress on defect distribution. Acta Mater. 211, 116845 (2021).
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