Influence of Irradiation on Defect Spin Coherence in Silicon Carbide-Reference-Cited by-同舟云学术

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

Published:2020-04-21 Issue:4 Volume:13 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Kasper C.,Klenkert D.^ORCID,Shang Z.,Simin D.,Gottscholl A.,Sperlich A.^ORCID,Kraus H.,Schneider C.,Zhou S.^ORCID,Trupke M.^ORCID,Kada W.,Ohshima T.^ORCID,Dyakonov V.,Astakhov G. V.^ORCID

Funder

German Research Foundation

FWF

JSPS KAKENHI

DFG

Jet Propulsion Laboratory, California Institute of Technology

NASA

China Scholarship Council

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.044054/fulltext

Reference57 articles.

1. Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy

2. Room temperature coherent control of defect spin qubits in silicon carbide

3. Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

4. Quantum computing with defects

5. Polytype control of spin qubits in silicon carbide

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