The radiation effects on 4H–SiC epilayers using different electron radiation methods-Reference-Cited by-同舟云学术

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The radiation effects on 4H–SiC epilayers using different electron radiation methods

Published:2022-06 Issue: Volume:166 Page:207216
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Yu Bowen,Wang Zhao,Ma Yao,Yang Nan,Deng Xiaoyu,Guo Rui,Xiang Meiju,Gong Min,Yang Zhimei,Li Yun,Li Jianer,Li Xueliang,Feng Yong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference24 articles.

1. Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations;Li;Semicond. Sci. Technol.,2019

2. Radiation, people and the environment;Ford,2004

3. Natural Radiation Environment Definition for Electronic System Design;Barth,2002

4. SiC power-switching devices - The second lectronics revolution?”;Cooper;Proc. IEEE,2002

5. Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density;Paradzah;Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC;Journal of Electronic Materials;2024-03-04

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