Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations-Reference-Cited by-同舟云学术

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Author:

Li Heyi,Liu Chaoming^ORCID,Zhang Yanqing,Qi Chunhua,Wei Yidan,Zhou Jiaming,Wang Tianqi,Ma Guoliang,Wang Zujun,Dong Shangli,Huo Mingxue

Funder

The project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Science and Technology Project of Sichuan

111 project

National Natural Science Foundation of China

Natural Science Foundation of Heilongjiang Province

Science and Technology Innovation Foundation of Harbin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference30 articles.

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