Depth profiling of high energy nitrogen ions implanted in the 〈100〉, 〈110〉 and randomly oriented silicon crystals
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-02
2. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy;Journal of Raman Spectroscopy;2014-05-30
3. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-02
4. Low energy implantation to inhibit wear in N+ ions implanted WC–Co composite;Materials & Design;2014-01
5. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation;Journal of Raman Spectroscopy;2013-01-10
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