Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM-Reference-Cited by-同舟云学术

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Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM

Published:2014-02 Issue: Volume:320 Page:6-11
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Paneta V.,Erich M.,Fazinić S.,Kokkoris M.,Kopsalis I.,Petrović S.,Tadić T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Ion Implantation and Synthesis of Materials;Nastasi,2006

2. Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system

3. Range study of Eu implanted into Si channeling directions: Evidence for theZ1effect

4. Defect production and annealing due to high-energy ion implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-classical applications of chemical analysis based on nuclear activation;Journal of Radioanalytical and Nuclear Chemistry;2019-12-05

2. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC;Journal of Raman Spectroscopy;2019-05-27

3. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy;Journal of Raman Spectroscopy;2014-05-30

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