Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
Author:
Affiliation:
1. Laboratory of Physics, Vinča Institute of Nuclear Sciences; University of Belgrade; PO Box 552 Belgrade Serbia
2. Department of Physics; National Technical University of Athens; GR-157 80 Athens Greece
Funder
Physics and Chemistry with Ion Beams
Support of Public and Industrial Research Using Ion Beam Technology
Publisher
Wiley
Subject
Spectroscopy,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/jrs.4211/fullpdf
Reference23 articles.
1. Ion beams in silicon processing and characterization
2. Ion Implantation and Synthesis of Materials
3. Ion-beam-induced amorphization and recrystallization in silicon
4. Study of reverse annealing behaviors of p[sup +]/n ultrashallow junction formed using solid phase epitaxial annealing
5. Megavolt arsenic implantation into silicon
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3. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-02
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