Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC-Reference-Cited by-同舟云学术

Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

Published:2019-05-27 Issue:8 Volume:50 Page:1186-1196
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Flessa Aikaterini¹,Ntemou Eleni¹,Kokkoris Michael¹,Liarokapis Efthymios¹^ORCID,Gloginjić Marko²,Petrović Srdjan²,Erich Marko²,Fazinić Stjepko³,Karlušić Marko³,Tomić Kristina³

Affiliation:

1. Department of PhysicsNational Technical University of Athens Zografos Greece

2. Laboratory of Physics, Vinča Institute of Nuclear ScienceUniversity of Belgrade Belgrade Serbia

3. Center of Excellence for Advanced Materials and Sensing DevicesInstitut Ruđer Bošković Zagreb Croatia

Funder

European Regional Development Fund

Hrvatska Zaklada za Znanost

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5629

Reference32 articles.

1. Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry

2. SiC for sensors and high-temperature electronics

3. Raman spectroscopy study of heavy-ion-irradiated α-SiC

4. Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

5. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy

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