Author:
Sharp J.A.,Gwilliam R.M.,Sealy B.J.,Jeynes C.,Hamilton J.J.,Kirkby K.J.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. International Technology Roadmap for Semiconductors, 2003.
2. Influence of fluorine pre-amorphization on the diffusion and activation of low-energy implanted boron during rapid thermal annealing;Huang;Appl. Phys. Lett.,1994
3. Comparison of low energy BF2+, BCl2+ and BBr2+ implants for the fabrication of ultrashallow P±N junctions;Ganguly;J. Appl. Phys.,2001
4. Simulated annealing analysis of Rutherford backscattering data;Barradas;Appl. Phys. Lett.,1997
5. S.H. Winston, R.M. Gwilliam, B.J. Sealy, G. Boudreault, C. Jeynes, R.P. Webb, K.J. Kirkby, Evaluation of the boron activation and depth distribution using BBr2+ implants, in: 2002 14th International Conference on Ion Implantation Technology Proceedings, IEEE Cat. No. 02EX505, 2003, p. 115.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献