Comparison of low energy BF2+, BCl2+, and BBr2+ implants for the fabrication of ultrashallow P+-N junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1433926
Reference8 articles.
1. Device performance of shallow junction PMOSFETs fabricated using low-energy ion implantation of B and BF2 into crystalline and Ge preamorphised silicon
2. Influence of implant induced vacancies and interstitials on boron diffusion in silicon
3. Electrically active defects in shallow pre-amorphisedp + n junctions in silicon
4. Reduction of transient boron diffusion in preamorphized Si by carbon implantation
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1. Influence of multi-energy boron difluoride implantation on the second-harmonic generation of thermally poled fused silica;Optical Materials;2020-11
2. Evaluation of BBr2+ and B++Br+ implants in silicon;Materials Science and Engineering: B;2005-12
3. Comparison of elemental boron and boron halide implants into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
4. Halogens;Computational Microelectronics;2004
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