Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode

Author:

Olivero P.,Forneris J.,Gamarra P.,Jakšić M.,Giudice A. Lo,Manfredotti C.,Pastuović Ž.,Skukan N.,Vittone E.

Funder

Accademia Nazionale dei Lincei – Compagnia di San Paolo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04

2. A Monte Carlo software for the 1-dimensional simulation of IBIC experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08

3. Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

4. Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy;ISRN Materials Science;2013-01-17

5. Radiation Effects Microscopy;Characterization of Materials;2012-10-12

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