Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2135507
Reference17 articles.
1. The thermal neutron response of miniature silicon carbide semiconductor detectors
2. SiC detectors for neutron monitoring
3. High-resolution short range ion detectors based on 4H-SiC films
4. Particle detectors based on semi-insulating silicon carbide
5. Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide
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1. Measurement of the electron–hole pair creation energy in a 4H-SiC p-n diode;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-07
2. 4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04
3. Estimation of the Fast-Neutron Fluence Rate with a 4H-SiC Based Detector in a 14.1 MeV Mono-Energetic Field;IEEE Transactions on Nuclear Science;2023
4. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12
5. Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation;Applied Physics Letters;2022-07-04
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