Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2135507
Reference17 articles.
1. The thermal neutron response of miniature silicon carbide semiconductor detectors
2. SiC detectors for neutron monitoring
3. High-resolution short range ion detectors based on 4H-SiC films
4. Particle detectors based on semi-insulating silicon carbide
5. Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide
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1. 4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04
2. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12
3. Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation;Applied Physics Letters;2022-07-04
4. Aluminum ion plasma monitored by SiC detectors from low to high laser intensity and from ns up to fs pulse duration;Optics Communications;2021-10
5. Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors;Advanced Materials for Radiation Detection;2021-08-06
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