Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride CMP
Author:
Publisher
Elsevier BV
Subject
General Chemical Engineering
Reference18 articles.
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4. The effect of CeO2 abrasive size on dishing and step height reduction of silicon oxide film in STI-CMP;Lim;Surf. Coat. Technol.,2005
5. Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization;Kang;J. Mater. Res.,2007
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