Quasi-ballistic thermal conduction in 6H–SiC

Author:

Cheng Z.,Lu W.ORCID,Shi J.,Tanaka D.,Protik N.H.ORCID,Wang S.,Iwaya M.,Takeuchi T.,Kamiyama S.ORCID,Akasaki I.,Amano H.,Graham S.ORCID

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference39 articles.

1. Ultrawide-bandgap semiconductors: research opportunities and challenges;Tsao;Adv. Electronic Mater.,2018

2. High thermal boundary conductance across bonded heterogeneous GaN–SiC interfaces;Mu;ACS Appl. Mater. Interfaces,2019

3. Thermal conductivity of GaN, GaN 71, and SiC from 150 K to 850 K;Zheng;Phys. Rev. Mater.,2019

4. Anisotropic thermal conductivity of 4H and 6H silicon carbide measured using time-domain thermoreflectance;Qian;Mater. Today Phys.,2017

5. Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles;Protik;Mater. Today Phys.,2017

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