Morphology and Hydrogen in Passivating Amorphous Silicon Layers

Author:

Gerke Sebastian,Becker Hans-Werner,Rogalla Detlef,Hahn Giso,Job Reinhart,Terheiden Barbara

Publisher

Elsevier BV

Reference25 articles.

1. Street RA, Cahn RW, Davis EA, Ward IM. Hydrogenerated amorphous silicon. Cambridge University Press. Cambridge; 1991.

2. Gerke S, Becker H-W, Rogalla D, Hahn G, Job R, Terheiden B. Investigation of hydrogen dependent long-time thermal characteristics of PECV-deposited intrinsic amorphous layers of different morphologies. In: Proc 29th EU PVSEC, Amsterdam 2014. p. 9-12.

3. Dauwe S, Schmidt J, Hezel R. Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films. In: Proc 29th IEEE PVSC, New Orleans 2002. p. 1246-9.

4. Gerke S, Herguth A, Brinkmann N, Hahn G, Job R. Evaluation of capacitance-voltage spectroscopy by correlation with minority carrier lifetime measurements of PECVD-deposited intrinsic amorphous layers. In: Proc 28th EU PVSEC, Paris 2013. p. 2600-3.

5. Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films;Harbison;J Appl Phys,1984

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