Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures-Reference-Cited by-同舟云学术

Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures

Published:2020-05-28 Issue:9 Volume:257 Page:2000097
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Jafari Sahar¹²^ORCID,Steffens Jonathan³,Wendt Michael¹,Terheiden Barbara³,Meyer Sylke¹,Lausch Dominik¹⁴

Affiliation:

1. Materials and Processes Fraunhofer Center for Silicon Photovoltaics CSP Otto-Eißfeldt-Straße 12 06120 Halle Germany

2. Technologies of Photovoltaics Department of Electrical, Mechanical and Industrial Engineering (EMW) Anhalt University of Applied Sciences HSA Bernburger Straße 55 06366 Köthen Germany

3. Department of Physics University of Konstanz Universitätsstr. 10 78457 Konstanz Germany

4. DENKweit GmbH Marthastraße 13 06108 Halle Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000097

Reference27 articles.

1. Overview on SiN surface passivation of crystalline silicon solar cells

2. The hydrogen content of plasma-deposited silicon nitride

3. Secondary Ion Mass Spectroscopy

4. RBS and ERD analysis of semiconductor device materials

5. Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-term stability of low-temperature deposited Cat-CVD SiN_x thin film against damp-heat stress;Japanese Journal of Applied Physics;2023-12-21

2. Secondary Ion Mass Spectrometry Study of Hydrogenated Amorphous Silicon Layer Disintegration upon Rapid (Laser) Annealing;physica status solidi (a);2023-05-09

3. A Study of a-Si:H Absorption Edge Using Dunstan’s Model;Baghdad Science Journal;2023-04-01

4. High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices;Nanomaterials;2022-10-04

5. Understanding Light- and Elevated Temperature-Induced Degradation in Silicon Wafers Using Hydrogen Effusion Mass Spectroscopy;IEEE Journal of Photovoltaics;2021-11