Optimum substrate bias condition for TiN thin film deposition using an ECR sputter system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Handbook of Plasma Processing Technology;Rossnagel,1990
2. Copper film formation using electron cyclotron resonance plasma sputtering and reflow method
3. Ultrathin oxide films deposited using electron cyclotron resonance sputter
4. Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma
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1. Enhanced Thermal Stability of Sputtered TiN Thin Films for Their Applications as Diffusion Barriers against Copper Interconnect;Inorganics;2023-05-09
2. Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates;Coatings;2021-08-05
3. Correlation of Structural, Morphological, Electrical and Mechanical Properties of TiN Thin Film at Different Substrate Bias;Science of Advanced Materials;2017-02-01
4. Effects of Substrate Bias on the Hardness and Resistivity of Reactively Sputtered TaN and TiN Thin Films;JOM;2016-01-19
5. Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films;Surface and Interface Analysis;2014-11-18
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