Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference23 articles.
1. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
2. Design and characterization of GaN∕InGaN solar cells
3. III–nitrides: Growth, characterization, and properties
4. GaN-based optoelectronics on silicon substrates
5. Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
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1. Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu;Journal of the Institute of Science and Technology;2022-12-01
2. Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures;APL Materials;2020-02-01
3. Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices;RSC Advances;2020
4. Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure;Journal of Applied Physics;2019-07-14
5. Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector;ACS Applied Materials & Interfaces;2019-02-21
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