High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors
Author:
Funder
MSIP/IITP
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
1. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2. A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications
3. Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate
4. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment
5. Reliability issues of Gallium Nitride High Electron Mobility Transistors
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