Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate-Reference-Cited by-同舟云学术

Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate

Published:2014-05 Issue: Volume:95 Page:42-45
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ahn Ho-Kyun,Kim Zin-Sig,Bae Sung-Bum,Kim Hae-Cheon,Kang Dong-Min,Kim Sung-Il,Lee Jong-Min,Min Byoung-Gue,Yoon Hyoung-Sup,Lim Jong-Won,Kwon Yong-Hwan,Nam Eun-Soo,Park Hyung-Moo^ORCID,Kim Hyun-Seok,Lee Jung-Hee

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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2. High performance enhancement-mode AlGaN/GaN HEMts using fluoride-based plasma treatment;Cai;IEEE Electron Dev Lett,2005

3. Recessed-gate structure approach toward normally-off high-voltage AlGaN/GaN HEMT for power electronics applications;Saito;IEEE Trans Electron Dev,2006

4. Enhancement-mode Si3N4/AlGaN/GaN MISFETs;Wang;IEEE Electron Dev Lett,2006

5. Corrion AL, Chen M, Chu R, et al., Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3 gate dielectric. In: Proc. device research conf. 2011. p. 213-214.

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