Production of GaN/n–Si thin films using RF magnetron sputtering and determination of some physical properties: argon flow impacts
Author:
Funder
Muş Alparslan Üniversitesi
Publisher
Springer Science and Business Media LLC
Link
http://link.springer.com/content/pdf/10.1007/s41779-019-00420-9.pdf
Reference47 articles.
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3. He, X.G., Zhao, D.G., Jiang, D.S., Zhu, J.J., Chen, P., Liu, Z.S., Le, L.C., Yang, J., Li, X.J., Liu, J.P., Zhang, L.Q., Yang, H.: GaN high electron mobility transistors with AlInN back barriers. J. Alloys Compd. 662, 16–19 (2016). https://doi.org/10.1016/j.jallcom.2015.12.031
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