Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference23 articles.
1. High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric
2. Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
3. High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With $\hbox{HfO}_{x}\hbox{N}_{y}/\hbox{HfO}_{2}/\hbox{HfO}_{x}\hbox{N}_{y}$ Tristack Gate Dielectrics
4. Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
5. Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure
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