Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference19 articles.
1. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
2. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
3. Influence of strain on annealing effects of In(Ga)As quantum dots
4. Thermal processing of strained-layer InGaAs/GaAs quantum well interface
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror;Current Applied Physics;2016-09
2. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013
3. AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS;Nano;2010-04
4. Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots;Journal of Nanoscience and Nanotechnology;2008-10-01
5. On the spectral response of quantum dot infrared photodetectors: Postgrowth annealing and polarization behaviors;Applied Physics Letters;2008-06-23
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