Thermal processing of strained-layer InGaAs/GaAs quantum well interface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference21 articles.
1. Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing
2. Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy
3. Thermal relaxation in strained InGaAs/GaAs heterostructures
4. Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing
5. Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation
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1. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09
2. MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure;Journal of Alloys and Compounds;2022-11
3. Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions;Semiconductor Science and Technology;2019-07-05
4. The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si;Journal of Applied Physics;2019-04-07
5. Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing;Applied Physics A;2010-09-02
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