Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference19 articles.
1. Challenges of High Aspect Ratio Oxide Etching
2. Profile control in high aspect ratio contact hole etching by a capacitively coupled plasma source
3. Cyclic Deposition/Etching Process to Etch a Bowing-Free SiO[sub 2] Contact Hole
4. New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line Antenna
5. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices
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1. A Morphology Control Method of Submicron SiO2 Arrays in CHF3/Ar Inductively Coupled Plasma Etching;2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO);2023-07-31
2. Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation;Physics of Plasmas;2023-01-01
3. Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide;Applied Surface Science;2022-10
4. Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation;Applied Surface Science;2022-09
5. Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma;Sensors;2022-08-31
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