Electroreflectance spectroscopy of compressively strained InGaN/GaN multi-quantum well structures
Author:
Funder
National Research Foundation of Korea
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference24 articles.
1. k⋅p method for strained wurtzite semiconductors
2. Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
3. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
4. Direct measurement of piezoelectric field in In[sub 0.23]Ga[sub 0.77]N/GaN multiple quantum wells by electrotransmission spectroscopy
5. Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
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1. Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes by taking into account the piezoelectric polarization fields;Indian Journal of Physics;2021-04-27
2. Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes;Applied Physics Letters;2020-02-10
3. Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques;Applied Sciences;2019-12-27
4. Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside;Journal of Materials Science;2018-03-15
5. Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates;Journal of Nanoscience and Nanotechnology;2017-06-01
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