Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s10853-018-2177-8/fulltext.html
Reference42 articles.
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3. Amano H, Kito M, Hiramatsu K, Akasaki I (1989) P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J Appl Phys 2:L2112–L2114
4. Nakamura S, Senoh M, Mukai T (1993) P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes. Jpn J Appl Phys 2:L8–L11
5. Khan MA, Bhattarai A, Kuznia JN, Olson DT (1993) High electron mobility transistor based on a GaN-Al x Ga1−xN heterojunction. Appl Phys Lett 63:1214–1215
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