Characterization of magnesium oxide gate insulators grown using RF sputtering for ZnO thin-film transistors
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference13 articles.
1. Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors
2. Low-voltage-driven top-gate ZnO thin-film transistors with polymer/high-k oxide double-layer dielectric
3. Advantages and limitations of MgO as a dielectric for GaN
4. Improvement of Mobility in ZnO Thin Film Transistor with an Oxygen Enriched MgO Gate Dielectric
5. Ion beam-assisted deposition of magnesium oxide thin film for PDP applications
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1. Effect of Deposition Temperature in RF Sputtered ZnO Thin Films on ZnO TFT Performance;2024-07-18
2. Effect of substrate temperature on growth mechanism and properties of PEALD-MgO dielectric films for amorphous-IGZO TFTs;Surface and Coatings Technology;2024-05
3. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations;Nanotechnology;2023-11-10
4. Effects of oxygen contents on the physical properties of MgO films and carrier transport of Au/MgO/ZnO MIS diodes;Ceramics International;2023-09
5. Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric;Materials Chemistry and Physics;2022-12
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