Cast: An electrical stress test to monitor single bit failures in flash-EEPROM structures-Reference-Cited by-同舟云学术

Cast: An electrical stress test to monitor single bit failures in flash-EEPROM structures

Published:1997-03 Issue:3 Volume:37 Page:473-481
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cappelletti P.,Bez R.,Cantarelli D.,Nahmad D.,Ravazzi L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Detecting oxide quality problems using JT testing;Crook,1991

2. Accelerated current test for fast tunnel oxide evaluation;Cappelletti,1991

3. Fowler-Nordheim tunnelling into thermally grown SiO2;Lenzlinger;J. Appl. Phys.,1969

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