Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics-Reference-Cited by-同舟云学术

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Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

Published:2012-05 Issue:6 Volume:50 Page:2307-2314
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Wheeler Virginia,Garces Nelson,Nyakiti Luke,Myers-Ward Rachael,Jernigan Glenn,Culbertson James,Eddy Charles,Kurt Gaskill D.

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference35 articles.

1. Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene;Hollander;Nano Lett,2011

2. In situ studies of Al(2)O(3) and HfO(2) dielectrics on graphite;Pirkle;Appl Phys Lett,2009

3. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001);Shen;Appl Phys Lett,2009

4. Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties;Robinson;ACS Nano,2010

5. Conformal Al(2)O(3) dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics;Lee;Appl Phys Lett,2008

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